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| BSP 318 S SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Logic Level * Avalanche rated * VGS(th) = 1.2 ...2.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 60 V ID 2.6 A RDS(on) 0.15 Package Marking Ordering Code BSP 318 S SOT-223 BSP 318 S Q 67000-S127 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 25 C TA = 100 C ID A 2.6 1.7 DC drain current, pulsed TA = 25 C IDpuls 10.4 E AS Avalanche energy, single pulse ID = 2.6 A, V DD = 25 V, RGS = 25 L = 10 mH, Tj = 25 C mJ 60 E AR IAR Avalanche energy, periodic limited by Tj(max) Avalanche current, repetitive,limited by Tj(max) Reverse diode dv/dt IS = 2.6 A, VDS = 40 V, di/dt = 200 A/s Tjmax = 150 C 0.18 2.6 A KV/s dv/dt 6 V GS P tot Gate source voltage Power dissipation TA = 25 C 14 1.8 V W Semiconductor Group 1 29/01/1998 BSP 318 S Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA RthJS -55 ... + 150 -55 ... + 150 C 70 17 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection *) MIL STD 883, Method 3015, Class 2 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 60 - Gate threshold voltage V GS=V DS, ID = 20 A V GS(th) 1.2 IDSS 1.6 2 A Zero gate voltage drain current V DS = 60 V, V GS = 0 V, Tj = -40 C V DS = 60 V, V GS = 0 V, Tj = 25 C V DS = 60 V, V GS = 0 V, Tj = 150 C IGSS 0.1 - 0.1 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-state resistance V GS = 4.5 V, ID = 2.6 A V GS = 10 V, ID = 2.6 A 0.12 0.07 0.15 0.09 Semiconductor Group 2 29/01/1998 BSP 318 S Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance V DS 2 * ID * RDS(on)max, ID = 2.6 A gfs S 2.4 5.6 pF 300 380 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 90 120 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 50 65 ns Turn-on delay time V DD = 30 V, VGS = 4.5 V, ID = 2.6 A RG = 16 tr 12 20 Rise time V DD = 30 V, VGS = 4.5 V, ID = 2.6 A RG = 16 td(off) 15 25 Turn-off delay time V DD = 30 V, VGS = 4.5 V, ID = 2.6 A RG = 16 tf 20 30 Fall time V DD = 30 V, VGS = 4.5 V, ID = 2.6 A RG = 16 Qg(th) 15 25 nC Gate charge at threshold V DD = 40 V, ID 0.1 A, V GS 0 to 1 V Qg(5) 0.4 0.6 Gate Charge at 5.0 V V DD = 40 V, ID = 2.6 A, V GS 0 to 5 V Qg(total) 7 10 Gate Charge total V DD = 40 V, ID = 2.6 A, V GS 0 to 10 V V (plateau) 14 20 V Gate plateau voltage V DS = 40 V, ID = 2.6 A - 3.6 - Semiconductor Group 3 29/01/1998 BSP 318 S Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Reverse Diode Inverse diode continuous forward current TA = 25 C IS A 2.6 Inverse diode direct current,pulsed TA = 25 C ISM V SD - 10.4 V Inverse diode forward voltage V GS = 0 V, IF = 5.2 A trr 0.95 1.2 ns Reverse recovery time V R = 30 V, IF=lS, diF/dt = 100 A/s Qrr 50 75 C Reverse recovery charge V R = 30 V, IF=lS, diF/dt = 100 A/s - 0.1 0.15 Semiconductor Group 4 29/01/1998 BSP 318 S Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 4 V 2.8 A 2.4 2.0 W Ptot 1.6 1.4 1.2 ID 2.2 2.0 1.8 1.6 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0, TC=25C Transient thermal impedance Zth JA = (tp) parameter: D = tp / T 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 0.10 10 -3 single pulse 10 -4 10 -2 0.05 0.02 0.01 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 29/01/1998 BSP 318 S Typ. output characteristics ID = (VDS) parameter: tp = 80 s 6.0 A 5.0 ID 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 a c Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.45 a b Ptot = 2W g jhf e i d l k VGS [V] a 2.5 b c d e f g h i j k 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 RDS (on)0.35 0.30 0.25 0.20 c 0.15 d bl 0.10 0.05 0.00 V 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS [V] = a 2.5 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 i h 6.5 7.0 j 8.0 f i gj kh e k 10.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 A 5.0 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s VDS 2 x ID x RDS(on)max 15 A 13 ID 12 11 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 29/01/1998 BSP 318 S Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 2.6 A, VGS = 4.5 V 0.38 Gate threshold voltage V GS(th) = f ( Tj ) parameter:VGS=V DS,ID = 20 A 3.0 V 2.6 VGS(th) 0.32 RDS (on) 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0.00 -60 -20 20 60 100 C 160 2.4 2.2 2.0 1.8 98% typ 1.6 1.4 1.2 1.0 0.8 0.6 typ max 0.4 0.2 0.0 -60 -20 20 60 100 140 V Tj min 200 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s 10 2 A C pF IF Ciss 10 1 10 2 Coss Crss 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 29/01/1998 BSP 318 S Avalanche energy EAS = (Tj) parameter: ID = 2.6 A, VDD = 25 V RGS = 25 , L = 10 mH 65 mJ 55 EAS 50 45 40 35 Typ. gate charge VGS = (QGate) parameter: ID puls = 3 A 16 V VGS 12 10 8 30 25 20 15 10 5 0 20 40 60 80 100 120 C 160 0 0 4 8 12 16 22 4 6 0,2 VDS max 0,8 VDS max 2 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 71 V 68 V(BR)DSS 66 64 62 60 58 56 54 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 29/01/1998 |
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